DRAM

Samsung plans to adopt hybrid bonding for HBM4 to improve thermal and interface performance, potentially gaining a competitive edge over SK hynix, which may delay its use due to costs concerns.

NEO Semiconductor has announced progress on its new 3D X-DRAM technology, with new 1T1C and 3T0C chip designs increasing DRAM speeds by an order of magnitude for tomorrow’s top-end computing.

Samsung is ending DDR4 production in favor of more lucrative technologies like DDR5 and HBM.

FMC and Neumonda develop non-volatile FeRAM products, revive memory production in Germany.

Chinese memory maker CXMT is reportedly preparing to raise DDR4 prices after months of aggressive discounting, as demand stabilizes and major suppliers shift focus to newer memory types.

With demand surging across multiple sectors, the U.S. memory giant is adjusting prices to match the tightening supply.

Micron's 1γ fabrication technology with EUV, new HKMG, and BEOL promises to increase performance while cutting power consumption for DRAM.

Samsung unveils 16Gb LPDDR5-Ultra-Pro DRAM at 12,700 MT/s with 4-phase self-calibration and AC-coupled transceiver equalization.

Increased competition from Chinese makers may force leading DRAM makers to phase out DDR3 and DDR5 SDRAM by end of the year.